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| P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=150V. Collector Dissipation:Pc(max)=625mW T stg Tj PC VCBO VCEO ABSOLUTE MAXIMUM RATINGS Storage Temperature - Junction Temperature - - - - Collector Dissipation- Collector-Base Voltage- Collector-Emitter Voltage- Emitter-Base Voltage - Collector Current----- - ----- - - - Ta=25ae(c) -55~150ae 150ae 625mW -160V -150V -5V -600mA TO-92 1D Emitter E 2D Base B 3D Collector C V EBO IC ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO HFE HFE HFE 1(c) 2(c) 3(c) -160 -150 -5 -50 -50 30 60 50 280 -0.2 -0.5 -1 -1 V V V nA nA IC=-100|I IE=-10|I A, IE=0 A IC=0 IC=-1mA, IB=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA DC Current Gain VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) fT Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V V MHz IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA, VCE=-10V, IC=-10mA F=100MHz Current Gain-Bandwidth Product 100 400 |
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